MBR3035PT [BL Galaxy Electrical]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | MBR3035PT |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
MBR3030PT - - - MBR30100PT
BL
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
SCHOTTKY BARRIER RECTIFIER
FEATURES
TO-3P(TO-247AD)
High surge capacity.
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
4.85
5.15
15.45
15.75
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
19.85
20.15
MECHANICAL DATA
Case:JEDEC TO-3P,molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Position: Any
3.70
4.30
2.00
3.00
2.20
2.60
2.00
2.40
14.20
14.80
3.00
3.40
1 1
0.40
0.80
1.00
1.40
2.00
3.00
10.90
A1
A2
A1
A2
K
K
Weight: 0.223 ounce, 6.3 grams
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Ratings at 25
MBR MBR
MBR MBR MBR MBR MBR MBR
UNITS
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
21
30
35
25
35
40
28
40
45
32
45
50
35
50
60
42
60
80
56
80
100
70
V
V
V
Maximum DC blocking voltage
100
Maximum average forw ard total device
IF(AV)
IFSM
30
A
A
m rectified current @TC = 105°C
Peak forw ard surge current 8.3ms single half
200
b
sine-w ave superimposed on rated load
Maximum forward
voltage
(IF=15A,TC=25
(IF=15A,TC=125
(IF=30A,TC=25
)
-
0.80
0.85
)
0.57
0.84
0.70
0.95
0.65
0.95
V
VF
)
(Note 1)
(IF=30A,TC=125
0.72
0.85
0.75
)
Maximum reverse current
at rated DC blocking voltage
@TC=25
1.0
60
0.2
IR
m A
@TC=125
40
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
RθJC
TJ
6.8
4.4
/W
- 55 ---- + 150
- 55 ---- + 150
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
www.galaxycn.com
2. Thermal resistance from junction to case.
Document Number 0267041
1.
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
MBR3030PT- - - MBR30100PT
FIG.1 -- PEAK FORWARD SURGE CURRENT
FIG.2 -- FORWARD DERATING CURVE
200
30
24
160
8.3ms Single Half Sine Wave
TJ=125
18
120
12
80
6.0
0
40
0
25
50
75
100
125
150
1
10
100
NUMBER OF CYCLES AT60HZ
CASE TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
500
10
Pulse width = 300µs
1% Duty Cycle
100
10
TJ=125
MBR3030PT-MBR3060PT
MBR3080PT-MBR30100PT
1
TJ=25
MBR3030PT-MBR3060PT
.1
MBR3080PT-MBR30100PT
1
TC=125℃
TC=25℃
.01
MBR3030PT-MBR3045PT
MBR3050PT-MBR3060PT
MBR3080PT-MBR30100PT
0
20
40
60
80
100
120
140
.1
1.5
.3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3 1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARDVOLTAGE, VOLTS
www.galaxycn.com
2.
Document Number 0267041
BLGALAXY ELECTRICAL
相关型号：
MBR3035PT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3
MCC
MBR3035PT-C
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD, PLASTIC PACKAGE-3
SENSITRON
MBR3035PT-E3
DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Diode
VISHAY
MBR3035PT-E3/45
DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode
VISHAY
MBR3035PTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3
MCC
MBR3035S-E3/4W
DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明